DIN DIN 50438-1 Determination of interstitial oxygen content of silicon intended for use in semiconductor technology by infrared absorption spectroscopy

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DIN DIN 50438-1 Document Information:

Title
Determination of interstitial oxygen content of silicon intended for use in semiconductor technology by infrared absorption spectroscopy

Pruefung von Materialien fuer die Halbleitertechnologie - Bestimmung des Verunreinigungsgehaltes in Silicium mittels Infrarot-Absorption - Teil 1: Sauerstoff

Deutsches Institut Fur Normung E.V.

Publication Date:
Jul 1, 1995

Keywords:

Halbleitertechnologie

Pruefung

Silicium

Verunreinigung

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